In this work, the effect of insertion of transition metal, TM (=Ni, Zn, Al and Fe), ions in Cu1−xTMxO samples (0<x<0.10) prepared via co-precipitation method is studied through experimental and computational methods. The analyses of X-ray diffraction (XRD) patterns using Rietveld refinement show that i) at x=0, all samples present a monoclinic crystal system with space group C2/c and ii) for increasing the TM-doping, Ni and Zn-doped samples show a small amount of spurious phases for concentrations above x=0.05. Based on these results, a defect disorder study for using atomistic computational simulations which is based on the lattice energy minimization technique is employed to predict the location of the dopant ions in the structure. In agreement with XRD data, our computational results indicate that the trivalent (Al and Fe ions) are more favorable to be incorporated into CuO matrix than the divalent (Ni and Zn ions).