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We present an experimental result of absorption and external quantum efficiency measurements of an InAs/GaSb Type II superlattice (T2SL). The probed T2SL sample consisted of a 6μm cutoff p–i–n diode having a 300-period superlattice with a 9-monolayer (ML) GaSb /0.9 ML InSb/7 ML InAs on a p-type GaSb substrate.The absorption quantum efficiency is estimated from the sample transmission at 87K. We prepared...
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