Reactive magnetron sputtering arrangement and the optimization of the direct current (dc) magnetron sputtering deposition process for obtaining n + a-Si:H/a-Si:H/a-SiN x structures in various sequences has been investigated. The simplified algorithms, which allow reliable software control under the chosen structure production, are also presented. Also described are infrared visible, ultraviolet optical measurements of obtained amorphous films and current-voltage-capacitance-temperature (I-V-C-T) electrical measurements of adequate thin-film transistors giving a possibility for correction of substrate temperature of deposition process in the case of top gate configuration.