The temperature-dependent photoluminescence (PL) properties of the As-doped (Zn 0.93 Mn 0.07 )O layer, which showed the stable p-type conductivity with carrier concentration of ∼10 18 cm −3 and carrier mobility of ∼10 cm 2 V −1 s −1 , were investigated. From fitting of the Bose–Einstein approximation using extracted emission parameters from temperature-dependent PL spectra, it was found that the interaction between exciton and phonon in p-(Zn 0.93 Mn 0.07 )O:As is higher than that in host material ZnO. This result was confirmed as resulting from the increase of disorder-activated phonon scattering which is attributed to the increase of free carriers donated from implanted As dopants.