Regrowth rates normalized by nuclear energy deposition in MeV ion beam induced epitaxial crystallization were investigated for five kinds of ions (C Au) at the beam energies of 1.5 and 5.6 MeV. An amorphous layer formed on crystalline silicon was recrystallized by ion beam irradiation at the temperature of 350°C with the dose rate of 2 10 1 2 ions/cm 2 s. The regrowth rate increased with decreasing ion mass and increasing beam energy. The regrowth rates of carbon ions were 4.3 and 6.7 times higher than those of gold ions for the beam energies of 1.5 and 5.6 MeV, respectively.