We report the observation of ordering in Al 0.3 Ga 0.7 N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (112¯2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO 2 mask was patterned along the [112¯0] sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0001) and (112¯0) facets. Layers of 1:1 [0001] ordered a-plane Al 0.3 Ga 0.7 N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al 0.3 Ga 0.7 N layers grown at the same time on the c-plane GaN facets.