The crystal orientation of GaN films deposited on fused quartz substrates by rf planar magnetron sputtering using a mesh to guard against plasma exposure was investigated by X-ray diffraction. Sample films were deposited at constant N 2 gas pressure and input power at a range of substrate temperatures between 84 o C and 600 o C. It was found that GaN films with good crystal orientation can be produced by rf sputtering with the c-axis of GaN crystals oriented normal to the substrate surface in almost all films produced. The crystal 00.2 orientation was good at substrate temperatures exceeding 300 o C, however, films deposited at 600 o C peeled from the substrate. The fine mesh installed to protect the film from exposure to plasma was found to be very useful for depositing films with a good crystal orientation of 00.2, and the best crystal orientation was realized for a film deposited by sputtering with a target to mesh separation of 30mm.