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In this work we conceived a model of a multilayer solar cell composed by four layers of opposite conductivities: an n-type 6H–SiC used as a frontal layer to absorb high energy photons (energy gap equals 2.9eV), a p-type Si layer, an n-type Si layer and a p-type SiGe back layer to absorb low energy photons (Si 0.8 Ge 0.2 with an energy gap equal to 0.8eV). The impurity concentration...
This investigation is applied the Taguchi method and combination the analysis of variance (ANOVA) to the photo resist (PR) coating process for photolithography in wafer manufacturing. Plans of experiments via nine experimental runs are based on the orthogonal arrays. In this study, the thickness mean and the uniformity of thickness of the PR are adopted as the quality targets of the PR coating process...
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