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We present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100–300K. This analysis is supported by a comparison between the results obtained by two-dimensional numerical simulations and measurements in the whole temperature range under study. The Graded-Channel transistor presents...
This paper presents a comparative analysis between graded-channel (GC) and conventional fully depleted SOI MOSFETs devices operating at high temperatures (up to 300°C). The electrical characteristics such as threshold voltage and subthreshold slope were obtained experimentally and by two-dimensional numerical simulations. The results indicated that GC transistors present nearly the same behavior as...
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