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A well-aligned Cu 2 O nanowire array was fabricated by the stress-induced method. A new stress-redistribution phenomenon related to the cooling procedure was observed and a creative growth procedure was demonstrated. High-quality Cu 2 O nanowires with an aspect ratio up to 300 and a growth density higher than 10 9 cm −2 can be derived under the optimum condition of cooling gradually for 4h after heating for 5h. A typical photovoltaic effect was demonstrated to exist in the Cu 2 O/Cu junction.