We report on high-mobility top-gate organic field-effect transistors (OFETs) and complementary-like inverters fabricated with a solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative as the channel semiconductor and a CYTOP/Al 2 O 3 bilayer as the gate dielectric. The OFETs showed ambipolar behavior with average electron and hole mobility values of 1.2 and 0.01cm 2 V −1 s −1 , respectively. Complementary-like inverters fabricated with two ambipolar OFETs showed hysteresis-free voltage transfer characteristics with negligible variations of switching threshold voltages and yielded very high DC gain values of more than 90V/V (up to 122V/V) at a supply voltage of 25V.