MOCVD-TiN deposition from TDMAT precursor consists of two steps: a deposition and a plasma treatment in hydrogen. The effects of different plasma treatment times are tested on high aspect ratio contacts, finding an increase in the number of high resistance contacts for short plasma treatments. Moreover, the W nucleation layer thickness on MOCVD-TiN is impacted by the plasma time: for a short treatment a thin nucleation layer is found. Various investigations are performed on different MOCVD-TiN layers, comparing samples exposed to the air and samples in-situ capped by Ti to prevent oxygen contamination. It is shown that the plasma treatment influences the film morphology.