The spin tunneling magnetoresistive effect has been investigated for NiFe/Al 2 O 3 /Co junctions with a small junction area down to 3.5 3.5 μm 2 fabricated using photolithography. About 75% of the prepared junctions exhibit the spin tunneling magnetoresistive effect, the maximum value being around 1% at room temperature. Negative interlayer exchange coupling (J < 0) is found in these junctions. The strength of the coupling tends to increase with decreasing junction area.