Indium selenide thin films were prepared by annealing the Se-In stack layers in high vacuum. Selenium film was deposited using chemical bath deposition and indium film, using vacuum evaporation. Annealing temperatures were varied from 373 to 723K. Properties of these films were investigated using different analytical techniques. X-ray diffraction studies revealed that polycrystalline and amorphous γ-In 2 Se 3 films were obtained depending on the annealing temperature. Both dark and photoconductivity of the films were found to decrease with increase in annealing temperature. Films formed at 373K were having optical band gap 1.84eV and maximum photoconductivity, while those formed at 723K were found to have band gap 2.09eV and showed minimum photoconductivity. From Hall measurements, it was observed that type of conductivity of the films depend upon the annealing temperature.