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The rapid crystallization of amorphous silicon utilizing the radio-frequency (rf) inductive coupling thermal plasma torch of argon is demonstrated. Highly-crystallized Si films were fabricated on thermally grown (th-)SiO 2 and textured a-Si:H:B/SnO 2 /glass by adjusting a distance between the tip of the silica tube and the substrate stage and the translational velocity of the substrate...
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