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Fabrication of GexC1−x has been a big challenge because of the solubility of C in Ge. Only a small percentage of GeC bonds (11.6%) have been introduced so far. In this work, a-GexC1−x with GeC content up to 21% has been fabricated with 50W RF power at 250°C by reactive sputtering methods. The effects of the radio frequency power and substrate temperature on the yield of GeC were analysed in detail...
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