Thin films of semiconducting, monoclinic, VO 2 (M) have been deposited on glass by atomic layer deposition (ALD). The composition and microstructure of the films have been examined by X-ray diffraction and scanning electron microscopy (SEM). The films deposited are VO 2 (M) phase, as deposited, and have been obtained at temperatures as low as 400°C. The films comprise largely of platelet morphology as illustrated by SEM. The semiconductor-metal transition near 340K leads to a large jump in resistivity in all the VO 2 (M) films, on glass, as deposited. The formation of VO 2 (M) phase has been shown to occur under very specific ALD conditions (ALD window). Growth kinetics, microstructure, and electrical properties have been studied as a function of deposition temperature.