Ytterbium-doped Bi 4 Ti 3 O 12 (Bi 3.4 Yb 0.6 Ti 3 O 12 , BYT) ferroelectric thin films were successfully deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates by chemical solution deposition (CSD). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. Structure evolution and ferroelectric properties of the as-prepared thin films annealed under different temperatures (600 °C–750 °C) were studied in detail. Additionally, the mechanism concerning the dependence of electrical properties of the BYT ferroelectric thin films on the annealing temperature was discussed.