Highly c-axis textured SrTiO 3 (STO) thin films were directly grown on Si(100) substrates by XeCl excimer pulsed laser deposition technique without the utilization of buffer layer. Among the important deposition parameters, the substrate temperature, oxygen pressure, and target-to-substrate distance imposed most significant effect on the c-axis preferred orientation characteristics of the STO thin films.For the optimum deposition parameters such as substrate temperature of 700°C, oxygen pressure of 6.67×10 −2 mbar and target-to-substrate distance of 35mm, the full width at half maximum intensity (FWHM) of STO(002) XRD peak was 0.42°. The FWHM of STO(002) peak was further reduced to 0.35° and 0.32° via. post-treatment with rapid thermal annealing (RTA at 800°C for 30s) and furnace annealing process (at 1000°C for 1.5h), respectively. The STO/Si films thus obtained are suitable for the synthesis of perovskite ferroelectric thin films.