The application of the reverse current I r of an implantation damaged diode for low-dose ion implantation monitoring is presented. A linear dose dependence of reverse current was found for H 1 + 200 keV, He 4 e + 200 keV, 1 1 B + 40 keV, and i 2 8 Si 4 implants within the dose range 5 10 9 - 1 10 1 2 cm - 2 . The temperature and time stability of the current I r and the influence of implantation conditions on its magnitude were studied experimentally and analysed by means of numerical simulations. The results showed that I r may change considerably with time and temperature mainly due to the dissociation of unstable VP pairs. It was shown that the method may be useful for very low-dose uniformity mapping of ultra-deep implants.