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The investigation results of the formation of carbon nitride layers by high dose ion implantation in the multilayer targets are presented. N + ions were implanted in the Si 3 N 4 /C/Si 3 N 4 /Si system. Composition and structural properties of the prepared layers were investigated. Computer simulation on the formation of superhard C x- > 3 N y- > 4 layers with high dose nitrogen implantation in the Si 3 N 4 /C/Si 3 N 4 /Si as well as in TiN/C/Si 3 N 4 /Si systems was carried out. The optimal energy and dose sets for nitrogen ion implantation necessary to form a carbon nitride layer that is stoichiometrically close to C 3 N 4 were found.