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SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H–SiC substrates at a growth rate of 5–10μm/h using silane (SiH4) and propane (C3H8) or ethylene (C2H4) as precursors. The concentrations of epitaxial defects and dislocations depend...
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