Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2MeV He + ions. The films were prepared by reactive DC sputtering at the temperatures of −200°C, +25°C and +300°C. A perfect 1U:1N stoichiometry with a layer thickness of 660nm was found for the film deposited at −200°C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1MeV Ar + ion beam with ion fluence of about 1.2–1.7×10 16 ions/cm 2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at −200°C and at +25°C, but almost no change in the film thickness was detected for the film deposited at +300°C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3×10 16 ions/cm 2 .