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Light can be used to monitor and control anisotropic etching of silicon. For in situ monitoring of the Si-thickness during anisotropic wet etching in KOH, a technique based on transmission spectroscopy has been investigated. Using special self-calibrating, recursive algorithms, thickness of Si membranes can be measured in the range between 10 and 500 μm. Illuminating the Si-surface during etching...
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