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Atomic layer deposition (ALD) of titanium dioxide from TiCl 4 and H 2 O was studied at substrate temperatures of 100-400 o C. Using a real-time quartz crystal microbalance method, it was demonstrated that although the surface reactions were self-limited, the growth rate depended on the temperature and development of the thin film structure. Relatively low growth rate which...
Microstructure of titanium dioxide (TiO 2 ) thin films grown in the atomic layer deposition (ALD) process from titanium ethoxide (Ti(OCH 2 CH 3 ) 4 ) and water (H 2 O) vapor was studied. It was revealed that formation of crystalline (anatase) phase in the films at 200 o C and higher substrate temperatures resulted in considerable surface roughening and...
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