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Ge thin films with a thickness of about 110nm have been deposited by electron beam evaporation of 99.999% pure Ge powder and annealed in air at 100–500°C for 2h. Their optical, electrical and structural properties were studied as a function of annealing temperature. The films are amorphous below an annealing temperature of 400°C as confirmed by XRD, FESEM and AFM. The films annealed at 400 and 450°C...
Tin oxide (SnO 2 ) thin films (about 200nm thick) have been deposited by electron beam evaporation followed by annealing in air at 350–550°C for two hours. Optical, electrical and structural properties were studied as a function of annealing temperature. The as-deposited film is amorphous, while all other annealed films are crystalline (having tetragonal structure). XRD suggest that the films...
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