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Deposition of Ni as contact on 4H-SiC has been investigated. Ni/4H-SiC samples were annealed at temperatures of 600, 800 and 950 o C for 30min and were non-destructively characterized by soft X-ray emission spectroscopy (SXES) using synchrotron radiation as excitation. Si L 2,3 SXE showed the formation of Ni 2 Si for all annealing temperatures. The C K SXE indicated...
This investigation deals with the impact of pre-treatment and Ni thickness on the reactions of Ni–silicide/SiC contact fabrication. The specimens have been prepared by sputter depositing 3–100nm Ni layer on 4H–SiC wafer followed by annealing at 800°C in vacuum for 20min. The results by means of XPS show as follows: among the chemical cleaning procedures which have been tested, the recipe NH 4...
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