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In this work, TiO2 based metal/metal oxide/metal memristor structures are investigated using I–V–t measurements. TiO2 films are deposited to pre-patterned area using a lift-off technique. Bottom and top metallization are done using Pt and Ti RF-sputtering, and 10nm thick active TiO2 layer is grown by reactive RF sputter at room temperature. Amorphous film formation is observed by XRD measurements...
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