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Highly conductive and transparent ZnO thin films were prepared by atmospheric pressure CVD on glass substrates in the temperature range from 375 to 475 o C. Aluminium acetylacetonate or gallium acetylacetonate were used as the dopant source of group III element. The resistivity of the films critically depends on the amount of dopants and changes in a range of 10 -1 to 10 -...
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