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In this study, we examined the nanoscratch behavior of annealed multilayered silicon–germanium (SiGe) films comprising alternating sublayers (Si) deposited using an ultrahigh-vacuum chemical vapor deposition (UHV/CVD) system. Annealing consisted of ex situ thermal treatment in a furnace system. We used a nanoscratch technique to investigate the nanotribological behavior of the SiGe films and atomic...
In this study, ZnTiO 3 films were grown by radio frequency magnetron co-sputtering using a sintered ceramic target on silicon substrates, we used nanoindenter techniques under a CSM mode to evaluate the hardness (H) and elastic modulus (E) of the films after annealing in temperature range of 520–820°C. The measured values of hardness and elastic moduli of the ZnTiO 3 films were in...
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