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The successful application of ellipsometry for in-situ investigation of In 0.5 Ga 0.5 As quantum dot (QD) growth on GaAs (001) substrates in Stranski-Krastanow growth mode is reported. The Δ-Ψ trajectory of ellipsometric signal during In 0.5 Ga 0.5 As growth shows a different feature compared with the one shown in the growth of...
Electron diffraction X-ray (EDX) microanalysis and micro-Raman spectroscopy were used to study the annealed semiconductor surfaces. EDX images showed evidences of two types of regions on the annealed GaAs and GaSb surfaces. Micro-Raman results displayed good proof of two different regions into the surface of both semiconductors, since the spectra of one region showed considerable differences to the...
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