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We have demonstrated the characterizations of the morphologies and local electrical properties of ultrathin (<5 nm) SiO x /Si(001) structures that were formed by thermal oxidation of a spatially controlled atomic-step-free Si(001) surface. Both the SiO x surface and the SiO x /Si(001) interface had good morphology, with root-mean-square values of roughness, less than 0.12...
This work presents atomic force microscopy (AFM) results on surface imaging of ultrathin SiO 2 oxides with thickness ~10nm. The SiO 2 was grown by 850 o C dry oxidation of (100)Si substrates which underwent RCA wet and dry hydrogen plasma procedures prior to oxidation. The pre-oxidation cleans lead to significantly smooth Si surfaces, but on the hydrogenated silicon surfaces...
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