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The paper focuses on a particular silicon nitride thin film (SiN x ) produced by plasma enahanced chemical vapor deposition (PECVD) technique with high deposition rate (26nm/min) and low values of mechanical stress (<100MPa). This was perfomed with mixed frequency procedure varying the modulation of high frequency at 13.56MHz and low frequency at 308kHz of RF power supply during the deposition,...
Ba(Ti 1−x ,Ni x )O 3 thin films were prepared on fused quartz substrates by a sol–gel process. X-ray diffraction and Raman scattering measurements showed that the films are of pseudo-cubic perovskite structure with random orientation and the change of lattice constant caused by Ni-doping with different concentrations is very small. Optical transmittance spectra indicated that...
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