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BCN films on silicon substrates were deposited with two different PECVD techniques. A microwave plasma with RF-bias enhancement (MW-PECVD) and a direct current glow discharge plasma system (GD-PECVD) was used with N-trimethylborazine (TMB) and triethylamine borane (TEAB) as precursors and with benzene as an additional carbon source. Argon and nitrogen were used as plasma gases. Substrate temperature,...
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