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We have developed an accurate and easy method for the evaluation of electron beam damage of SiO 2 thin films on Si in Auger microprobe analysis. The critical dose of SiO 2 specimens can be determined from a curve fit with a proposed equation to the normalized measured metallic-like Si LVV peak intensities to that of a Si standard as a function of total electron dose. We found the inverse...
Sputter depth profiling of nanostructures requires quantitative thin film analysis with high accuracy and with optimum resolution. More recently, powerful quantification models, such as the so-called mixing roughness information depth (MRI) model, have increased the accuracy of depth profiling to the sub-monolayer region. Using the MRI model, interdiffusion coefficients at nanolayer interfaces can...
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