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We report on ZnO atomic layer deposition (ALD) with a precursor combination of diethylzinc as metal-precursor and pure oxygen (O 2 ) as oxidant as an alternative to H 2 O as oxygen precursor. The temperature region of self-limiting ALD growth (ALD window) is determined and shows an increase in growth rate of about 60% compared to water as oxygen-precursor. Finally, in situ X-ray photoelectron...
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