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Interface structures of SrTiO 3 (STO)/Si were investigated systematically using combinatorial method with growth temperature gradient in pulse laser deposition (PLD) and cross-sectional high-resolution transmission electron microscopy (HRTEM). Besides SiO 2 interfacial layer, another amorphized STO layer which lying on the SiO 2 interfacial layer was also observed in the crystalline...
A combinatorial methodology was employed to investigate oxide/semiconductor interfaces for future devices using a combination of temperature gradient pulsed laser deposition and transmission electron microscopy. In growing oxide materials on Si substrate, a proper termination was found to be inevitable for avoiding surface oxidation. For this purpose, arsenic was used to obtain a durable surface of...
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