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Rapid gas-evaporation method is proposed and developed, which yields Si nanoparticles (SiNPs) in a few seconds at high yields of 20%–60% from inexpensive and safe bulk Si. Such rapid process is realized by heating the Si source to a temperature ≥2000 °C, much higher than the melting point of Si (1414 °C). The size of SiNPs is controlled at tens to hundreds nanometers simply by the Ar gas pressure...
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