Ga doped ZnO films with various gallium oxide doping concentrations (0, 0.5, 1, 3, and 5 wt%) are prepared using radio frequency (RF) magnetron sputtering technique. The structural, morphological, and optical properties of the films are studied. XRD analysis shows that all the films exhibit hexagonal wurtzite structure with preferred orientation along <002> direction. The moderate doping of Ga in ZnO lattice is found to improve the crystallinity of the films. Micro-Raman spectra also reveal the formation of hexagonal wurtzite ZnO phase in the films. AFM and SEM images of the films present uniform dense distribution of grains. All the Ga doped films show higher values of transmittance compared to the undoped film. Band gap energies were calculated using Tauc plot. The photoluminescence spectra show both UV and visible emissions.