Using plane-view and cross-sectional Raman spectroscopy, polarized infra-red spectroscopy and photothermal spectroscopy, the structure, composition and internal stress of 6H-SiC crystal implanted sequentially with N + and Al + ions to form a (SiC) 1 - x (AlN) x solid solution were studied non-destructively and self-consistently. The optimum implantation temperature for the synthesis of a (SiC) 1 - x (AlN) x solid solution with a 6H structure was found to be 600 o C.