Stable Schottky barrier diodes with tetracyanoquinodimethane doped with 5% by weight bis(β-naphthyl)-tetrathiafulvalene as active n-doped semiconductor have been fabricated by physical vapor deposition. Gold and aluminum were used as ohmic and Schottky contacts, respectively. An ideality factor of 3.5 was deduced from current-voltage measurements. Several cycles of voltage sweeping were necessary before the diodes showed optimal characteristics. Charge migration is most likely the dominating mechanism behind this phenomenon. From capacitance-voltage measurements, at different frequencies, a charge carrier concentration of 2.2 10 1 6 cm - 3 was determined. A high charge carrier mobility of 14 cm 2 V - 1 s - 1 was deduced. These devices showed no degradation after a month of storage in a laboratory environment.