The effects of deposition temperature and pressure on the properties of MgTiO 3 the films were investigated. MgTiO 3 thin films were grown on Si(100) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO 3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the substrate temperature. The electrical properties were measured using C–V and current–voltage (I–V) measurements on metal–insulator–semiconductor (MIS) capacitor structures. At a Ar/O 2 ratio of 100/0, RF power of 400W and substrate temperature of 350°C, the MgTiO 3 films with 5.62μm thickness possess a dielectric constant of 15.91 (f=10MHz), a leakage current density of 9.1×10 −10 A/mm 2 was obtained at 500kV/cm. The leakage current decreased with decrease chamber pressure and substrate temperature.