The temperature dependence equilibrium vapor pressure (p e ) T data yielded a straight line when ln(p e ) was plotted against the reciprocal temperature in the range of 312.82–367.12K, leading to a standard enthalpy of sublimation (Δ sub H°) value of 68.2±0.8kJmol −1 for 1,4-bis(trimethylsilyl)benzene (TMSB). From the depression of the melting point in the DTA-mode, the standard enthalpy of fusion (Δ fus H°) was found to be 26.9±2.5kJmol −1 . A thin film of silicon carbide was grown on graphite substrate at 573K using TMSB or bis(trimethylsilyl)acetylene as precursors. The deposited films were characterized by scanning electron microscopy and energy dispersive X-ray analysis for their composition and morphology.