The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
By means of increasing the doping level of thermodiode base the silicon p 2+ n + -type temperature sensors have been attained whose response curves do not exhibit the kinks in the cryogenic temperature range. The effect is connected with the suppression of freezing out of carriers to impurities in the diode base. It results in lowering of base resistance below junction one. Mechanisms responsible for the response curve form under this conditions are discussed. With this aim the sensors' current-voltage characteristics in wide ranges of temperatures and currents are measured and analysed.