A high-throughput SCALPEL tool will employ a typical exposure current of 30 μA and electron column potential of 100 KV, delivering power up to ∼3 W through a 0.25 mm (wafer scale) square optical sub-field. Electrons lose energy to form heat in the upper 60 μm of a wafer in vacuum during a sub-field exposure period of ∼200 microseconds, creating significant local wafer heating at the time of image formation. Our initial analysis indicates that expansion-induced pattern placement errors will require a sub-field position correction strategy.