The deposition of titanium nitride films from single-source precursors bearing alkylhydrazine-derived ligands is reported. The complex [Ti 2 Cl 4 (NN(CH 3 ) 2 ) 2 (NH 2 N(CH 3 ) 2 ) 2 ] sublimes at 140-150 o C (0.1 mmHg) and affords titanium nitride films in a chemical vapor deposition reactor at substrate temperatures of >=400 o C. By contrast, structurally related single-source precursors containing alkylamine- or ammonia-derived ligands deposit titanium (IV) nitride chloride films at 400 o C in the same reactor, and only afford titanium nitride films at >=475 o C. The hydrazide(1-) complex [TiCl 2 (N(CH 3 )N(CH 3 ) 2 ) 2 ] sublimes at 130 o C (0.1 mmHg) and affords titanium nitride films at 600 o C. At substrate temperatures of =<550 o C, poorly adherent blue-colored coatings were obtained. The atmospheric pressure chemical vapor deposition reaction of titanium tetrachloride and 1,1-dimethylhydrazine affords titanium nitride films at >500 o C, but gives titanium (IV) nitride chloride films at =<500 o C. Characterization of the films obtained from the depositions is described. The results demonstrate that ligands derived from 1,1-dialkylhydrazines can be powerful reducing sources for high valent early transition metals, depending on the ligand coordination mode, and can lead to a significant reduction in deposition temperatures compared to traditional nitrogen sources in cases where a high valent metal source compound must be reduced to a lower oxidation state.