In this communication, ZnGa 2 Te 4 thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa 2 Te 4 /n-Si heterojunction diode was fabricated. The structure of ZnGa 2 Te 4 thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current–voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (−10V to 10V) at temperature interval (303–423K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance Rs, the shunt resistance R sh , the ideality factor n and the barrier height ϕb of the diode, the total density of trap states N 0 and the exponential trapping distribution P o were determined. The obtained results showed that ZnGa 2 Te 4 is a good candidate for the applications of electronic devices.