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Improvement of the intensity and purity of emission from GaP green light emitting diodes (LEDs) has been achieved by pre-annealing of the substrate. With annealing the substrate under 20kPa of phosphorus vapor for an hour just before the epitaxial growth, emission from deep level disappeared and saturation current density was decreased to 1x10 -16 A/cm 2 . The output power...
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