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A Coumarin 30/p-Si organic-inorganic device was fabricated by forming a Coumarin 30 thin film on a p-Si semiconductor. The resulting structure had excellent rectifying properties. Electrical parameters of the structure were determined from current–voltage (I–V) measurements in the temperature range 300–380K. While the barrier height (ϕ b ) increased with increasing temperature, the ideality...
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