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The effects of Si-doping on the growth of GaAs and Al x Ga 1-x As alloy in MOVPE system using tertiarybutylarsine (TBA) in a pure N 2 ambient have been studied. For Si-doped GaAs, the electron carrier concentration increases to a maximum of 3.4x10 18 cm -3 with the increase of SiH 4 flow rate, and then decreases with any further increase...
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